Abstract
SOI CMOS technology was developed for extended high temperature (HT) range applications (to 300 °C). MOSFETs come in two options: for digital applications with minimum gate length 0.18 µm and 1.8 V supply voltage and for analog applications with minimum gate length 0.5 µm and 5 V supply. Results of electrical characteristics measurement are demonstrated, analyzed, and compared for SOI MOSFETs of both options. A modified SOI MOSFET compact model is developed for extended temperature range up to 300°C to provide the possibility of HT SOI CMOS circuit simulation with SPICE.
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