Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)

Abstract

I-V characteristics and reliability parameters for the set of hardened SOI MOSFET's with special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300°C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current rise; for tungsten metallization (contacts, conductor lines and vias) I-T and R-T characteristics, failure time. The SOI MOSFET standard compact SPICE model BSIMSOI with traditional temperature limit of 150°C is modified to be used for CMOS IC simulation in the extended temperature range up to 300°C. The results indicate that the 0.5–0.18μm SOI MOSFET's with tungsten metallization have stable electrical behavior that makes them possible to be used during implementation of HT CMOS IC's (to 300°C).