Abstract
This paper describes the effect of the growth temperature and the total hydrogen flow rate on the uniformity, growth rate and solid composition in MOCVD grown AlGaAs, GaAs and AlAs. It is found that the growth rate of GaAs and AlGaAs decreases in the gas flow direction when the growth temperature is higher than the critical temperature (which increases with increasing the total gas flow rate), while the growth rate of AlAs is uniform over a temperature range investigated. And under these growth conditions, the growth rate of AlGaAs is less than the sum of those of GaAs and AlAs. These experimental observations are consistent with the formation of some complexes such as GaAs-polymer and GaAlAs-complex in the vapour phase. It is suggested that the clustering number is about 20–30 for GaAs and 2 for AlAs, namely, the clusters of the form (GaAs) 20–30(AlAs) 2 are formed in the vapour phase for the growth of Al 0.4GA 0.6As when the growth temperature is 830°C and total flow rate is 1.6 1/min.
Published Version
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