Effects of susceptor rotation speed and total flow rate on selectivity in metalorganic chemical vapor deposition growth techniques

Abstract

We investigate the effect of using a high-speed rotating susceptor on selectivity of InGaAs growth by low-pressure metalorganic chemical vapor deposition (MOCVD), and compare this with the effect of the total hydrogen flow rate at 450°C. It is found that selectivity is greatly improved with increased rotation speed, as previously reported, and is also affected by the total flow rate. It is confirmed that an increase in the flow rate has a similar effect on selectivity as an increase in rotation speed. The improved selectivity in both cases can be explained by a higher gas velocity in the growth chamber. It is also found that large variation in selectivity at higher rotation speeds might be caused by the recirculation flow on the substrate when the total flow rate is much less than the matching flow rate.