High temperature defect equilibrium in ZnS:Cu single crystals

Abstract

High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation.