Abstract
High temperature electrical conductivity (HTEC) under defined component vapor pressure was investigated in undoped ZnS. The appearance of different slopes on HTEC isotherms can be explained by a two-carrier conduction mechanism involving electrons and holes. The experimental data at sulphur vapor pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder in Zn sublattice. The native defects for compensation of these defects may be two-fold ionized zinc vacancies. Antistructure disorder disappears with increasing of Zn vapor pressure. The method for solving the system of equations of quasichemical reactions without approximation was used because slopes of experimentally measured HTEC isotherms varied with component vapor pressure. High temperature defect equilibrium (HTDE) preliminary model containing antistructure disorder is proposed and compared with HTDE models for CdS and for CdTe.
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