Abstract
The growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.3 μm in an external cavity configuration are reported. The epitaxial structure was grown in two steps on a GaSb substrate by molecular beam epitaxy. It is made of a GaSb/AlAsSb Bragg reflector, a GaInAsSb/AlGaAsSb multi quantum-well active region and an AlAsSb heatspreader layer. A TEM 00 low-divergence laser continuous wave mode operation was demonstrated from 277 K up to 350 K. A characteristic temperature T 0 as high as 74 K was measured just below 300 K. Threshold incident pump power as low as 600 W/cm 2 at 277 K and a maximum output power of 8.5 mW at 288 K was observed.
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