Advanced 1.3 µm vertical cavity lasers based on AlInGaAs/InP-AlGaAs/GaAs fused structures

Abstract

We report on recent status of vertical cavity lasers emitting in the 1.3 µm waveband comprising AlInGaAs/InP active regions wafer fused to Al(Ga)As/GaAs distributed Bragg reflectors. This technique produces vertical cavity surface emitting lasers (VCSELs) emitting in 4 channels of the 1310 nm coarse wavelength division multiplexing band that enabled a new generation of transceivers operating at 40 Gbps over 2 km of standard single mode fiber with a power consumption as low as 1 W and vertical external cavity surface emitting lasers (VECSELs) with record output power of 8.5 W.