High Temperature-Coefficient of Resistance at Room Temperature in W-Doped VO2 Thin Films on Al2O3 Substrate and Their Thickness Dependence

Abstract

The temperature coefficient of resistance (TCR) in V1-xWxO2 (VWO) with various W-doping levels and thicknesses were investigated on Al2O3(0001) single crystal substrates. The VWO thin films with an appropriate doping level (x=0.015) showed high TCR over 10%/K just at room temperature (300 K), which was larger than that in other reported high TCR materials. Moreover, no significant change of the TCR property was found based on their thickness dependence, meaning effective enhancement of the sensing performance for bolometric application.