Abstract
High-temperature and low-threshold-current of 1.5 µm strain-compensated multiple-quantum-well (SC-MQW) graded-index separate-confinement-heterostructure (GRIN-SCH) AlGaInAs/InP laser diodes have been successfully fabricated. An epitaxial wafer was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and the 2-µm-wide ridge-waveguide (RWG) structure with self-aligned process was adopted. Significant improvements in threshold current high-temperature operation and characteristic temperature have been demonstrated. Under CW operation, these laser diodes exhibited a threshold current of 5.4 mA and 17 mA at 20°C and 100°C, respectively. Output power exceeding 5 mW was obtained at a temperature as high as 120°C. Also they have a characteristic temperature T0 of 90 K between 20°C and 70°C which is as good as the best values of the conventional InGaAsP/InP lasers.
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