High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw

Abstract

Development of high efficient and high accuracy slice processing technology is required for realizing the high quality and low cost large SiC wafer. Our target of high speed slicing is slicing a 6 inch SiC single crystal ingot in about 9 hours. This slicing speed is about 10 times higher than the loose abrasive slurry sawing and about 4 times higher than the current technology of diamond wire sawing. The slicing speed and the slicing accuracy are in the relationship of trade-off. Therefore, in this research, we have studied the high speed slicing technique of 3 inch and 4 inch SiC single crystal ingot aiming at reduction of sliced wafers SORI. Moreover, we have extracted subjects to scale-up for the high speed slicing of the 6 inch SiC single crystal ingot.