Abstract
A high speed, fully static, 1024 word × 1 bit random access memory has been developed, using improved Diffusion Self-Aligned (DSA) MOS transistors, reduced design rule (3µm) and an improved circuit design. The RAM is TTL compatible and operates with a single power supply of 5V without an internal bias generator. Address access time is 10 ns and power dissipation is 480mW at a standard power supply of 5V.
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