Abstract
A high speed, fully static, 1024 word by 4 bit Random Access Memory has been developed, using Diffusion Self Aligned (DSA) MOS transistors as active devices. The present RAM operates on a single power supply of 5 (±1) volt without internal bias generator. Its typical performances are; 57 ns access time, 100 ns cycle time and 520 mW operating power. The device was also confirmed to operate satisfactorily in the battery back up mode with 4.4 mW (VDD=1.1v) power dissipation.
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