Abstract
A novel nanocomposite photoresist was synthesized for extreme ultraviolet lithography (EUVL) by a radical polymerization process. This resist system exhibited enhanced sensitivity and contrast for EUVL. The potential for EUVL nanofeatures is also examined. The high sensitivity and the desirable contrast in this resist, indicates that it is a promising candidate not only for sub-100 nm resolution EUVL, but also for X-ray lithography and low voltage electron beam lithography.
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