High resolution TEM analysis of focused ion beam amorphized regions in single crystal silicon—A complementary materials analysis of the teardrop method

Abstract

The predominant challenge of nanomachining by focused ion beam (FIB) is the generational down-scaling of minimum dimensions of cutting-edge technologies such as very large scale integration (VLSI) process technology. To keep pace with feature size reduction, the state of the art FIB beam profiles must also shrink proportionally. This requirement for FIB profile shrinking necessitates tests that analyze FIB profiles and their characteristics. With such tests in hand, the suitability for VLSI technology applications may be specified, developed, and qualified. The authors present herein various aspects and some fine details of the recently improved beam profile analysis, aka “teardrop” test. This test is based on obtaining real beam characteristics by analyzing amorphization traces produced by scanning the beam in question over a [001] Si single crystal sample, in a series of lines of increasing doses, followed by thorough analysis procedure. To derive the most accurate beam characteristics, the amorphized r...