Abstract
Atomic-resolution conventional electron microscopy has become routinely possible at elevated voltages (200–400 keV). However, many specimens are sensitive to damage at these voltages (the silicon knock-on threshold energy is 120–190 keV), hence there is incentive to go to lower voltage. Silicon (111) lattice imaging at 1.92 Å resolution with a 100 keV STEM in both axial bright-field (BF) and annular dark-field (ADF) mode using an ultra-high-resolution objective lens pole piece ( C s = 0.7 mm) has been achieved, and the results are presented here. Although the dark-field resolution had been anticipated, the bright-field resolution was unexpected and is interpreted as arising from the third transfer band of the bright-field contrast transfer function.
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