Abstract
Atomic structure imaging using bright field phase contrast at less than 2Å resolution has become routinely possible in medium and high voltage microscopes (>200 keV). Radiation damage at these elevated voltages can be serious and this limits the length of useful observation time. For example, the knock-on threshold energy for silicon is 120-190keV. Recently, a VG HB501A STEM equipped with a newly developed ultra-high resolution pole piece (Cs=0.7mm) has demonstrated the capability of achieving sub-2Å resolution in imaging the (111) silicon latticer using both bright field (BF) and annular dark field (ADF) modes at an operating voltage of l00keV (Fig.1).A thin silicon specimen was prepared through successive steps of chemical etching, anodic etching and reactive ion etching. Large flat thin areas about 100Å thick were produced in the specimen. Since there is no tilting mechanism for the stage used with this ultra-high resolution pole piece, the specimen was not oriented exactly along the (111) zone axis as indicated by CBED but was less than 1-2° off.
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