Abstract
Abstract The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and fine pattern fabrication. In proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm linewidth novolak based negative resist could be fabricated at 2X10 12 ions/cm 2 dose by 260 keV Be ++ FIB with 0.1 μm beam diameter. FIB lithography has also been applied to fabricating 0.1 μm NMOS gate patterns and X-ray masks.
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