Abstract
The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and fine pattern fabrication. In the proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm line and space poly(methylmethacrylate) patterns and 0.1 μm linewidth novolak based negative resist could be fabricated at 1×1013 and 2×1012 ions/cm2 dose by 260 keV Be++ FIB with 0.1 μm beam diameter, respectively.
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