Abstract
High rectification efficiency direct bandgap GePb quantum well trench N-MOSFET for 2.45G weak energy microwave wireless transmission
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https://doi.org/10.1007/s00339-023-06728-5
Journal: Applied physics | Publication Date: Jun 3, 2023 |
Citations: 1 |
High rectification efficiency direct bandgap GePb quantum well trench N-MOSFET for 2.45G weak energy microwave wireless transmission
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