Abstract
In this paper, we report on mid-wavelength infrared interband cascade photodetectors grown on InAs substrates. We studied the transport properties of the photon-generated carriers in the interband cascade structures by comparing two different detectors, a single stage detector and a two-stage cascade detector. The two-stage device showed quantum efficiency around 19.8% at room temperature, and clear optical response was measured even at a temperature of 323 K. The two detectors showed similar Johnson-noise limited detectivity. The peak detectivity of the one- and two-stage devices was measured to be 2.15 × 1014 cm·Hz1/02/W and 2.19 × 1014 cm·Hz1/02/W at 80 K, 1.21 × 109 cm·Hz1/02/W and 1.23 × 109 cm·Hz1/02/W at 300 K, respectively. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.
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