Abstract
Progress in the design and implementation of interband cascade (IC) structures for thermophotovoltaic (TPV) applications is reported. These devices were designed with enhanced electron barriers and p-type InAs/GaSb superlattice absorbers. These features have been shown to be successful in suppressing dark current in photodetectors. Our seven stage devices had cutoff wavelengths of 4.0 µm at 80 K and 5.0 µm at 300 K. Good photoresponse and dark current suppression was observed at low temperatures. Under illumination of a 1200 K blackbody, a short-circuit current of 5.46 A/cm2 and open-circuit voltage of 1.61 V were observed for a device temperature of 80 K. Above 80 K, we were able to observe high values of the open circuit voltage up to 180 K.
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