High-quality p - type Hg1−xCdxTe prepared by metalorganic chemical vapor deposition

Abstract

An arsenic source, tris-dimethylaminoarsine (TDMAAs), was used as a p-type dopant for Hg1−xCdxTe prepared by metalorganic chemical vapor deposition (MOCVD). The Hg1−xCdxTe layers were grown using the interdiffused multilayer process (IMP) at 360 °C with dimethylcadmium, di-isopropyltelluride and elemental mercury. Hole concentrations at 77 K in the range of 2×10+16–7×10+17 cm−3 were obtained in Hg1−xCdxTe with x=0.2–0.35, and ∼30%–50% of the arsenic was electrically active based on the data from secondary ion mass spectrometry (SIMS) measurements. These MOCVD Hg1−xCdxTe layers show minority carrier lifetimes at 77 K in the range of 3 ns–4 μs, which compare favorably with those from the best arsenic-doped Hg1−xCdxTe films prepared by liquid phase epitaxy.