Abstract
We present some of the latest results obtained from single wafer horizontal tube reactors (AIX 200RF) and multiwafer planetary reactors ® (AIX 2000HT) as used for MOVPE of blue LEDs. The AIX 2000HT was set up in a configuration of 7×2″ which provides unique uniformity capabilities due to the two fold rotation of the substrates. Composition uniformity of ternary material determined by 300 K PL-mappings show peak wavelength variations typically about 1 nm for AlGaN and GaInN. Our latest results are based on studies of various heterointerfaces in the GaInN/GaN system. GaInN single/hetero layers were investigated to optimise photoluminescence properties. Several approaches of capping GaInN/GaN with another GaN layer to develop high quality DH (doublehetero) structures are presented. Using an optimised interfacing technique we obtained device quality DH structures with state of the art composition uniformity across 2″ wafers. The information obtained in the investigation of these DH structures was used to produce high quality SQW (single quantum well) and MQW (multi quantum well) structures.
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