Abstract
A new high-Q microwave dielectric ceramic MgZrTa2O8 was investigated for the first time. Single monoclinic-structured MgZrTa2O8 was obtained by the conventional solid-state route and sintered at 1390–1470°C for 5h. The variation trend of dielectric constant was in accordance with that of relative density and ionic polarizability. The Q×f value increased by increasing the packing fraction. The temperature coefficient of τf correlated with the variation of bond valence of Ta-site. In summary, the MgZrTa2O8 ceramic sintered at 1450°C showed excellent microwave dielectric properties of εr~29.5, Q×f~140,900GHz, τf~−44.3ppm/°C. These make MgZrTa2O8 material a very promising candidates for the application in microwave electronics.
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