Abstract
Single-crystal InP was grown by the synthesis solute diffusion (SSD) technique. The measured etch pit density of ∼10 cm−2, mobility (77 K) of 50 200 cm2 V−1 s−1 and carrier concentration (77 K) of 2.3×1014 cm−3 demonstrate the feasibility of SSD for the growth of high-quality bulk InP.
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