Abstract
The high pressure behavior of electronic states in GaAs/GaAlAs multiple quantum wells was investigated at 80K. It was found that the pressure dependence of the exciton energy Γ 1e,hh was nonlinear. The nonlinearity may be due to the pressure-induced transition of the Ga 1−xAl xAs barrier layers from a direct to an indirect band structure, and the resulting decrease of the effective barrier height.
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