Abstract
The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature-dependent photoluminescence, wavelength-dispersive x-ray analysis, and triple-crystal x-ray diffractometry.
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