Abstract
High-power semiconductor laser with an integrated master oscillator power amplifier (MOPA) based on the surface-slotted structure is demonstrated. The lasing wavelength of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.5~\mu \text{m}$ </tex-math></inline-formula> is achieved by using a group of micron-level slots fabricated by standard photolithography. The laser exhibits continuous-wave output power of up to 225 mW in the single-mode operation at room temperature. At the maximum output power, the modulation bandwidth is larger than 7 GHz, demonstrating the excellent performance of the MOPA based on the surface-slotted structure.
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