Abstract
Semiconductor monolithically integrated master oscillator power amplifiers on compound semiconductor substrates are expected to be widely used as compact high-power light sources. This paper reports a high-power semiconductor laser consisting of a curved surface DBR grating, a tapered power amplifier, and a grating outcoupler, which can be fabricated by a simple process without regrowth and which emits a collimated output beam. The power amplifier is designed according to theoretical simulation by the beam propagation method and the grating outcoupler is designed to compensate the wavefront distortion produced in the amplifier. The integrated device was fabricated and evaluated. A collimated output beam with a wavelength of 985 nm and a maximum output power of 124 mW was obtained in CW operation. Reduction of the degradation in output collimation due to wavefront distortion was confirmed, even in the high injection current region of the amplifier, owing to the use of the compensation function of the outcoupler. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(3): 61–70, 2001
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
