Abstract
High-power InGaAsN triple-quantum-well strain-compensated lasers grown by metal-organic chemical vapor deposition were fabricated with pulsed anodic oxidation. A maximum light power output of 145 mW was obtained from a 4-/spl mu/m ridge waveguide uncoated laser diode in continuous-wave (CW) mode at room temperature. The devices operated in CW mode up to 130/spl deg/C with a characteristic temperature of 138 K in range of 20/spl deg/C-90/spl deg/C.
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