Abstract
Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 µm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25–95 °C and 179 K in a temperature range of 25–85 °C are obtained from a 4 × 1000 µm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25–95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
Published Version
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