High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Abstract

Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an fmax = 42 GHz, and an ft = 15 GHz. At 10 GHz, 320 µm wide transistors had a total power of 900 mW with a gain of 6.5 dB, which corresponds to a power density of 2.8 W/mm.