A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

Abstract

In this work, we report comparative analysis of stable transconductance and high gain linearity for AlGaN and InAlN barrier-based HEMTs using an InGaN/GaN coupling channel with AlGaN back-barrier on Silicon carbide (SiC) substrate. The proposed InGaN/GaN coupling channel HEMTs showed flat transconductance and suppressed gm derivatives. LG 55 nm AlGaN (InAlN)/GaN conventional HEMTs showed 2.9 (3.8) A/mm of IDS, 0.59 (0.62) S/mm of transconductance (gm), 51.86 (27.42) V of VBR, 212 (233) GHz of fT, 242 (255) GHz of fMAX. Whereas, Lg 55 nm InGaN/GaN coupling channel-based AlGaN (InAlN) HEMT showed 3.3 (5.1) A/mm of IDS, 0.67 (0.71) S/mm of transconductance (gm), 53.12 (41.25) V of VBR, 251 (273) GHz of fT, 262 (283) GHz of fMAX. Moreover, high gate voltage swing (GVS) and larger OIP3 of proposed coupling channel HEMTs are suitable candidates for next-generation high linear RF applications.