High Performance Sub-10nm Si-doped MoS2 based Step Structure DG-TFET

Abstract

Two-dimensional (2D) nanomaterials, which include Molybdenum Disulfide (MoS2), are the focus research because of the wide possibilities of application in electronic and optoelectronic devices. Nanomaterials have potential use in high-performance transistors. The main objective of this study is to examine and evaluate a Silicon (Si)-doped MoS2 Step Structured Tunnel Field Effect Transistor (MoS2-SS-TFET). The energy gap in MoS2 is controlled by is controlled by thickness engineering, this unique property is used to design a device. At the source side and drain side of the channel, three layers and one layer of Si-doped MoS2 are used to build the step structure in order to increase the on-state current. The Subthreshold Swing (SS), threshold voltage (Vth), on-current (Ion), and off-current (Ioff) performance parameters for the device have been computed. In comparison of the study with other simulated devices, the Si-doped MoS2-SS-TFET has demonstrated enhanced device performance metrics. The device attributes such as work-function of dual metal, channel length ratio of proposed device, dielectric material and oxide thickness scaling are optimized for the improved device design.