High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications

Abstract

A novel SOI MESFET with the modified depletion region using a Triple Recessed Gate (TRG-SOI MESFET) is presented for RF applications. The proposed gate consists of lower and upper gate to control the channel thickness and the depletion layer will change by omitting part of total charge due to locating gate in the channel. The key idea of this shaped gate is to modify the depletion region and the charge distribution of the channel in order to lower the electric field of the device and improving the breakdown voltage. In addition the maximum power density, the maximum oscillation frequency, the cutoff frequency, and the minimum noise figure for the proposed structure are improved due to increasing the drain-source resistance and the transconductance and decreasing the gate resistance. Therefore, the TRG-SOI MESFET can be used for high-power and high frequency applications.