Abstract
The single indium selenide (In2Se3) nanowire photodetectors were fabricated, and the performance characteristics of the nanowire devices were systematically investigated. The single In2Se3 nanowire photodetectors show high and stable photoresponse in wide light wavelength (254-800 nm) and temperature range (7-300 K). The spectra response indicates that the absorption coefficient of the In2Se3 nanowires at certain wavelength dominates the performance of the devices. The good linearity of the photocurrents with the incident irradiation over a wide wavelength range has been obtained, demonstrating that the In2Se3 nanowire photodetectors work in a typical light-dependent resistor mode.
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