Abstract
III−VI and I−III−VI semiconductors with anomalous grain boundaries have been actively studied for high efficiency photovoltaic applications. Nanowire morphology can provide a well-defined nanodomain for studying grain boundary and p−n junction physics for improving solar cell efficiency. We report the synthesis of In2Se3 and CuInSe2 single crystalline nanowires via a Au-catalyzed vapor−liquid−solid growth. Superlattice forms in In2Se3 nanowires at room temperature and a reversible superlattice transformation takes place at 200 °C. Cu concentration in CuInSe2 nanowires can be controlled, and nanowires show a dependence of crystal structure on Cu concentration.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
