Abstract
III−VI and I−III−VI semiconductors with anomalous grain boundaries have been actively studied for high efficiency photovoltaic applications. Nanowire morphology can provide a well-defined nanodomain for studying grain boundary and p−n junction physics for improving solar cell efficiency. We report the synthesis of In2Se3 and CuInSe2 single crystalline nanowires via a Au-catalyzed vapor−liquid−solid growth. Superlattice forms in In2Se3 nanowires at room temperature and a reversible superlattice transformation takes place at 200 °C. Cu concentration in CuInSe2 nanowires can be controlled, and nanowires show a dependence of crystal structure on Cu concentration.
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