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Abstract
High-performance Si and SiGe epitaxial base bipolar transistors have been fabricated using a commercially available, reduced pressure, epitaxial reactor. The SiGe devices exhibit exceptional Early voltages in the range of 400-500 V, and an f/sub T/ of 31 GHz with a BV/sub CEO/ of 7.6 V and BV/sub CBO/ of 16 V. These results demonstrate that SiGe has potential as a commercially viable technology for analog, digital, and mixed-signal applications. >
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