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Abstract
A high-performance bipolar transistor has been developed using an in-situ phosphorus doped polysilicon (IDP) technique for emitter formation. The transistor demonstrated in ultrahigh current gain of 700, a maximum cutoff frequency f/sub T(max)/ of 64 GHz, and a breakdown voltage between collector and emitter BV/sub CEO/ of 3.6 V. At V/sub CE/ values of 2 and 3 V, a product of f/sub T(max)/ and BV/sub CEO/ of 200 GHz-V has been achieved. This value is nearly equal to the physical limitation for homojunction silicon transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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