Abstract
A high-performance bipolar transistor technology has been developed for emitter formation using in-situ phosphorus doped polysilicon (IDP). Using this technology, a Si bipolar transistor was designed with a shallow emitter junction, an ultra-high current gain, and a cutoff frequency (f/sub T/) of 64 GHz. Furthermore, the product of f/sub T/ and BV ceo of 200 GHz-V has been achieved. This value is nearly equal to the physical limitation for homojunction silicon transistors. The technology reported here is believed to be very promising for future fabrication of ultra-high-speed high-density bipolar and BiCMOS VLSIs. >
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