High-Performance Self-Aligned Bottom-Gate Low-Temperature Poly-Silicon Thin-Film Transistors With Excimer Laser Crystallization

Abstract

In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFT) with excimer laser crystallization have been demonstrated using self-aligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 mum could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFT with the channel length of 1 mum exhibited field-effect mobility reaching 193 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V ldr s without hydrogenation, while the mobility of the conventional non-SA-BG TFT and conventional SA top-gate one were about 17.8 and 103 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V ldr s, respectively. Moreover, SA-BG TFT showed higher device uniformity and wider process window owing to the homogenous lateral grains crystallized from the channel steps near the BG edges.