Abstract
We present the construction and characteristics of high-performance ZnO thin-film transistors (TFTs) on the glass substrate. The ZnO films were deposited as channel layers under oxygen rich ambience by reactive sputtering at room temperature. Typical transfer characteristics of the ZnO TFTs with different channel thicknesses were demonstrated and analyzed. Results show that the threshold voltage exhibited obvious negative shift with the increase of the channel thickness. The sub-threshold swing and off-state current were improved for the case of thinner active channel layer.
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