High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Abstract

AbstractThe ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized. P(VDF‐TrFE)/BaTiO3 nanocomposite of 300 nm thin film over 10 nm SiO2 was used in the optimized fabrication process sequence of FeFET. The addition of BaTiO3 nanoparticle to the P(VDF‐TrFE) copolymer has enhanced the ferroelectric property with an observed 2 V difference in memory window. The effect of temperature and frequency on these memory window characteristics were observed to optimized the stack thickness for an ideal FeCAP (ferroelectric capacitor). Drain current–drain voltage (ID‐VD) characteristics of P(VDF‐TrFE)/BaTiO3 FeFET shows significant variation in ID with pinch of voltage around 1 V for wide range of gate voltage (VG). ION/IOFF ratio of FeFET using P(VDF‐TrFE)/BaTiO3 was found to be 35, which was higher than the ratio of FeFET fabricated using P(VDF‐TrFE) copolymer (4.4). ID‐VG characteristics of both the FETs clearly indicate a lower threshold voltage (0.83 V) for P(VDF‐TrFE)/BaTiO3 FET, which is almost three times lesser than threshold voltage of a P(VDF‐TrFE) FET (2.5 V).