High Performance of Trench Schottky Contact Super Barrier Rectifier With a p-Injector

Abstract

In this paper, a trench Schottky contact super barrier rectifier (SSBR) with a p-injector (P-T-SSBR) is proposed and investigated by simulation. In addition to the concept of SSBR, the proposed P-T-SSBR also includes a trench gate design and a p-injector plug. The trench gate design eliminating the junction-type field-effect transistor effect of planar gate structure enables the new rectifier to have ultralow forward voltages and a good tradeoff between the forward voltages and reverse leakage currents. The p-injector plug combined with the trenched SSBR cells equips this new rectifier with the merged p-i-n/Schottky operating mechanism resulting in bipolar conducting mode at large forward current densities (larger than 1500 A/cm2) which will be helpful for surge current capability. Compared to the modified SSBR with an ${N}$ -enhancement layer, we presented earlier, simulation results show that, with almost the same breakdown voltage of 57 V, the new rectifier increases the figure of merit (equates to ${V}_{B}^{{\,{2}}}/{R}_{\textsf {on,sp}}$ ) by 35.1% at the forward current density of 200 A/cm2, decreases the reverse leakage current by 34.9%, and decreases the reverse recovery time by 25.4% at the reverse voltage of 12 V.