Schottky barrier rectifier with high current density using vanadium as barrier metal

Abstract

This letter reports on an improved forward voltage drop (VF) and reverse leakage current (IR) in Schottky barrier rectifier using vanadium (V–SBR) as the barrier metal with a low barrier height (φB) and argon implantation. The VF for a V–SBR was as low as 0.25 V compared to 0.39 V for a molybdenum (Mo)–SBR at the same forward current density (JF) of 60 A/cm2. This study was able to achieve a good result for JF in SBR. Presently, the conventional Schottky rectifier with a low φB metal is used to achieve low VF, but at the expense of a high IR. To reduce this effect, crystalline Si was altered into amorphous Si using argon implantation on the n-epitaxial layer. Finally, a SBR with a high JF and low IR could be fabricated.