Abstract
In this paper, on the basis of further discussion of the device structure and operational mechanism of the Schottky contact Super Barrier Rectifier (SSBR), more key experimental results and comparative analysis are added. The experimental results and discussion of the influence of Schottky contact barrier, supper barrier, key cellular parameters and epitaxial layer on device performance are proposed. Both the Schottky contact and super barrier significantly affect forward voltages and reverse leakage currents. However, the influence of the two on forward I–V characteristics is different. The forward voltage and reverse leakage of SSBR have obvious stability as the temperature increases from 20 °C to 150 °C when compared to conventional Schottky Barrier Diode (SBD). Moreover, the forward voltage at small forward current density and high temperature leakage have obvious advantages.
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