Abstract
In this letter, the electrical characteristics of the Schottky contact super barrier rectifier (SSBR) are explained and verified by simulations and experiments. In addition to an MOS channel operating as a super barrier, there is an indirect Schottky contact in the SSBR for electrons. Adjusting both the Schottky contact for coarse adjustment and the super barrier for fine adjustment can improve the tradeoff between the forward voltages and reverse leakage currents. The SSBR exhibits similar Schottky-like electrical characteristics to those of the SBR with ohmic contact presented earlier, except that there is no conductivity modulation for the SSBR, and it still operates in unipolar conducting mode at forward voltages above the p-n junction knee voltage. The measured breakdown voltage of SSBR is 56 V, and the reverse recovery time is approximately30 ns.
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