Abstract
This study involves a novel fabrication of high sensitivity, fast response, non-toxic and low-cost near infrared (NIR) photodetector based on cubic crystal structure SnS nanoflakes on a glass substrate using chemical bath deposition. The photodetector exhibited good photoresponse characteristics under NIR (750nm) light illumination from the light emitting diode, including the sensitivity (698), rise time (0.44s) and decay time (0.5s) at bias voltage 5V. Moreover, the photodetector showed excellent reproducibility and stability characteristics with time. The photoresponse properties also were studied at different bias voltages and illumination light intensities. Based on the above mentioned results, in addition to its low-cost, and non-toxic nature, the SnS photodetector is a promising optoelectronic device that is effectively applicable over NIR range.
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