Abstract
Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).
Highlights
Los Alamos, NM 87545, USA e State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 People’s Republic of China † Electronic supplementary information (ESI) available: I–V curve for the 1st cycle and afterwards repetitions, distribution of RLRS and RHRS, retention property of the Pt/NBT/Nb-doped SrTiO3 (Nb):STO resistive switching devices, switching speed and current response under voltage pulses, current vs. voltage measurement of the Pt/ Nb:STO/Ag sample, evidence of absence of Ag diffusion in the NBT/Nb:STO/Ag samples, analysis on the relative stoichiometric change of the NBT samples using X-ray Photoelectron Spectroscopy (XPS), analysis of conduction mechanism by I–V fitting, ionic conductivity of the NBT film
We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching
The devices are SET to the low resistance state (LRS) at a positive voltage of less than 1.2 V, and RESET back to the high resistance state (HRS) when the voltage is swept to negative values
Summary
Los Alamos, NM 87545, USA e State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 People’s Republic of China † Electronic supplementary information (ESI) available: I–V curve for the 1st cycle and afterwards repetitions, distribution of RLRS and RHRS, retention property of the Pt/NBT/Nb:STO resistive switching devices, switching speed and current response under voltage pulses, current vs. voltage measurement of the Pt/ Nb:STO/Ag sample, evidence of absence of Ag diffusion in the NBT/Nb:STO/Ag samples, analysis on the relative stoichiometric change of the NBT samples using XPS, analysis of conduction mechanism by I–V fitting, ionic conductivity of the NBT film. Chao Yun, a Matthew Webb, a Weiwei Li, a Rui Wu,a Ming Xiao,a Markus Hellenbrand, a Ahmed Kursumovic,a Hongyi Dou,b Xingyao Gao,b Samyak Dhole,c Di Zhang,b Aiping Chen,d Jueli Shi,e Kelvin H.
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